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PDF AMD510C Data sheet ( Hoja de datos )
| Número de pieza | AMD510C | |
| Descripción | N & P-Channel MOSFET | |
| Fabricantes | Analog Power | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AMD510C (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Analog Power
AMD510C
P & N-Channel 100-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, and cordless telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
DPAK saves board space
• Fast switching speed
• High performance trench technology
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
100 160 @ VGS = 4.5V
140 @ VGS = 10V
-100 290 @ VGS = -4.5V
270 @ VGS = -10V
D1
ID (A)
15
16
-11
-12
S
2
G
1
S1 G1 D S2 G2
S
1
N-Channel MO SF ET
G
2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
TA=25oC
TA=70oC
ID
Pulsed Drain Currentb
IDM
Continuous Source Current (Diode Conduction)a
IS
Power Dissipationa
TA=25oC PD
Operating Junction and Storage Temperature Range TJ, Tstg
100 -100
±20 ±20
16 -12
30 -32
40 -40
30 -30
50 50
-55 to 175
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum
50
3.0
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AMD510C_A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AMD510C.PDF ] | |
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