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PDF SI7866DP Data sheet ( Hoja de datos )
| Número de pieza | SI7866DP | |
| Descripción | N-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 20-V (D-S) MOSFET
Si7866DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0025 @ VGS = 10 V
0.00375 @ VGS = 4.5 V
ID (A)
29
25
PowerPAKr SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
Bottom View
Ordering Information: Si7866DP-T1
FEATURES
D TrenchFETr Power MOSFET
D Low rDS(on)
D PWM (Qgd and Rg) Optimized
D 100% Rg Tested
APPLICATIONS
D Low-Side MOSFET in Synchronous Buck
DC/DC Converters in Desktops
D Low Output Voltage Synchronous Rectifier
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
"20
29 18
25 14
60
4.5 1.6
5.4 1.9
3.4 1.2
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71848
S-31727—Rev. C, 18-Aug-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
18
50
1.0
Maximum
23
65
1.5
Unit
_C/W
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Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
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Document Number: 91000
Revision: 18-Jul-08
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