|
|
PDF SI7866ADP Data sheet ( Hoja de datos )
| Número de pieza | SI7866ADP | |
| Descripción | N-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SI7866ADP (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
N-Channel 20-V (D-S) MOSFET
Si7866ADP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
20 0.0024 at VGS = 10 V
0.0030 at VGS = 4.5 V
PowerPAK SO-8
ID (A)a
40
40
Qg (Typ.)
39 nC
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
Bottom View
Ordering Information: Si7866ADP-T1-E3 (Lead (Pb)-free)
Si7866ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free available
• TrenchFET® Power MOSFET
• Low RDS(on)
• PWM (Qgd and Rg) Optimized
• 100 % Rg Tested
RoHS
COMPLIANT
APPLICATIONS
• Low-Side MOSFET in Synchronous Buck DC/DC
Converters in Desktops
• Low Output Voltage Synchronous Rectifier
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
Limit
20
± 20
40
32
35b, c
28b, c
70
40
4.9b, c
25
31
83
53
5.4b, c
3.4b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
RthJA
RthJC
18
1.0
23 °C/W
1.5
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 73380
S-80440-Rev. C, 03-Mar-08
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
155
Si7866ADP
Vishay Siliconix
124
93
62
Package Limited
31
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
100 2.5
80 2.0
60 1.5
40 1.0
20 0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73380
S-80440-Rev. C, 03-Mar-08
www.vishay.com
5
5 Page 
www.vishay.com
Application Note AN821
Vishay Siliconix
PowerPAK® SO-8 Mounting and Thermal Considerations
SYSTEM AND ELECTRICAL IMPACT OF
PowerPAK SO-8
In any design, one must take into account the change in
MOSFET RDS(on) with temperature (figure 7).
On-Resistance vs. Junction Temperature
1.8
1.6
VGS = 10 V
ID = 23 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
Fig. 7 MOSFET RDS(on) vs. Temperature
A MOSFET generates internal heat due to the current
passing through the channel. This self-heating raises the
junction temperature of the device above that of the PC
board to which it is mounted, causing increased power
dissipation in the device. A major source of this problem lies
in the large values of the junction-to-foot thermal resistance
of the SO-8 package.
PowerPAK SO-8 minimizes the junction-to-board thermal
resistance to where the MOSFET die temperature is very
close to the temperature of the PC board. Consider two
devices mounted on a PC board heated to 105 °C by other
components on the board (figure 8).
Suppose each device is dissipating 2.7 W. Using the
junction-to-foot thermal resistance characteristics of the
PowerPAK SO-8 and the standard SO-8, the die
temperature is determined to be 107 °C for the PowerPAK
(and for DPAK) and 148 °C for the standard SO-8. This is a
2 °C rise above the board temperature for the PowerPAK
and a 43 °C rise for the standard SO-8. Referring to figure 7,
a 2 °C difference has minimal effect on RDS(on) whereas a
43 °C difference has a significant effect on RDS(on).
Minimizing the thermal rise above the board temperature by
using PowerPAK has not only eased the thermal design but
it has allowed the device to run cooler, keep rDS(on) low, and
permits the device to handle more current than the same
MOSFET die in the standard SO-8 package.
CONCLUSIONS
PowerPAK SO-8 has been shown to have the same thermal
performance as the DPAK package while having the same
footprint as the standard SO-8 package. The PowerPAK
SO-8 can hold larger die approximately equal in size to the
maximum that the DPAK can accommodate implying no
sacrifice in performance because of package limitations.
Recommended PowerPAK SO-8 land patterns are provided
to aid in PC board layout for designs using this new
package.
Thermal considerations have indicated that significant
advantages can be gained by using PowerPAK SO-8
devices in designs where the PC board was laid out for
the standard SO-8. Applications experimental data gave
thermal performance data showing minimum and
typical thermal performance in a SO-8 environment, plus
information on the optimum thermal performance
obtainable including spreading copper. This further
emphasized the DPAK equivalency.
PowerPAK SO-8 therefore has the desired small size
characteristics of the SO-8 combined with the attractive
thermal characteristics of the DPAK package.
PowerPAK SO-8
107 °C
Standard SO-8
148 °C
0.8 °C/W
PC Board at 105 °C
16 C/W
Fig. 8 Temperature of Devices on a PC Board
Revision: 16-Mai-13
4 Document Number: 71622
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet SI7866ADP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SI7866ADP | N-Channel 20-V (D-S) MOSFET | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |