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PDF SSF3612E Data sheet ( Hoja de datos )
| Número de pieza | SSF3612E | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | GOOD-ARK | |
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DESCRIPTION
The SSF3612E uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.4V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional
or bi-directional load switch, facilitated by its
common-drain configuration.
GENERAL FEATURES
● VDS = 25V,ID = 11A
RDS(ON) < 20mΩ @ VGS=4.0V
RDS(ON) < 17mΩ @ VGS=4.5V
RDS(ON) < 12mΩ @ VGS=10V
● High Power and current handling capability
● Lead free product
● Surface Mount Package
SSF3612E
25V N-Channel MOSFET
Schematic Diagram
Marking and Pin Assignment
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3612E
SSF3612E
SOP-8
Ø330mm
SOP-8 Top View
Tape Width
12mm
Quantity
2500 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
25
±12
11
50
3.1
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
40 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=25V,VGS=0V
Min Typ Max Unit
25 V
1 μA
www.goodark.com
Page 1 of 4
Rev.1.0
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SSF3612E.PDF ] | |
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