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PDF SSF4N60G Data sheet ( Hoja de datos )
| Número de pieza | SSF4N60G | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron Semiconductor | |
| Logotipo |  |
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Main Product Characteristics:
VDSS
RDS(on)
600V
1.85Ω (typ.)
ID 4A
Features and Benefits:
TO-251
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSF4N60G
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=25.9mH
Avalanche Current @ L=25.9mH
Operating Junction and Storage Temperature Range
Max.
4
2.5
16
77
0.62
600
± 30
117
3
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2012.12.13
www.silikron.com
Version : 1.0
page 1 of 8
1 page  
Typical electrical and thermal characteristics
SSF4N60G
Figure 5. Maximum Drain Current Vs. Case
Temperature
Case Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
©Silikron Semiconductor CO.,LTD.
2012.12.13
www.silikron.com
Version : 1.0
page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSF4N60G.PDF ] | |
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