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PDF SSF4953 Data sheet ( Hoja de datos )
| Número de pieza | SSF4953 | |
| Descripción | Dual P-Channel MOSFET | |
| Fabricantes | GOOD-ARK | |
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SSF4953
30V Dual P-Channel MOSFET
DESCRIPTION
The SSF4953 uses advanced trench technology to
provide excellent RDS(ON), low gate charge. It has
been optimized for power management applications
requiring a wide range of gave drive voltage ratings
(4.5V – 25V).
GENERAL FEATURES
●VDS = -30V,ID = -5.3A
RDS(ON) < 85mΩ @ VGS=-4.5V
RDS(ON) < 53mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
APPLICATIONS
●Battery protection
●Load switch
●Power management
D1
G1
G2
D2
S1 S2
Schematic Diagram
D1 D1 D2 D2
8 7 65
4953
1 2 34
S1 G1 S2 G2
Marking and Pin Assignment
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
4953
SSF4953
SOP-8
Ø330mm
Tape Width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
PD
TJ,TSTG
Limit
-30
±20
-5.3
-20
2.0
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-24V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±25V,VDS=0V
Min Typ Max Unit
-30 V
-1 μA
±100
nA
www.goodark.com
Page 1 of 6
Rev.2.0
1 page  
SSF4953
30V Dual P-Channel MOSFET
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedan
www.goodark.com
Page 5 of 6
Rev.2.0
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSF4953.PDF ] | |
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