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PDF SSF4N60F Data sheet ( Hoja de datos )
| Número de pieza | SSF4N60F | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | GOOD-ARK | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSF4N60F (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Main Product Characteristics
VDSS
RDS(on)
ID
600V
1.9Ω(typ.)
4A
TO-220F
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
SSF4N60F
600V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=27.5mH
Avalanche Current @ L=27.5mH
Operating Junction and Storage Temperature Range
Max.
4
2.5
16
33
0.26
600
± 30
220
4
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
www.goodark.com
Page 1 of 7
Rev.1.1
1 page  
SSF4N60F
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.goodark.com
Page 5 of 7
Rev.1.1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSF4N60F.PDF ] | |
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