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Número de pieza | SSF5510G | |
Descripción | N-Channel MOSFET | |
Fabricantes | GOOD-ARK | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSF5510G (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! SSF5510G
Preliminary
FEATURES
Advanced trench process technology
Ultra low Rdson, typical 8mohm
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
Lead free product
ID =56A
BV=55V
R DS (ON) =8mohm (typ.)
DESCRIPTION
The SSF5510G is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SS5510G is assembled
in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
SSF5510G Top View
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous drain current,VGS@10V
ID@Tc=100Cْ Continuous drain current,VGS@10V
IDM Pulsed drain current ①
Power dissipation
PD@TC=25ْC
Linear derating factor
VGS Gate-to-Source voltage
dv/dt
Peak diode recovery voltage
EAS
EAR
TJ
TSTG
Single pulse avalanche energy ②
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Max.
56
40
224
90
0.9
±20
5.0
405
TBD
–55 to +150
Units
A
W
W/ْ C
V
v/ns
mJ
ْC
Thermal Resistance
Parameter
RθJC Junction-to-case
RθJA Junction-to-ambient
Min.
—
—
Typ.
—
—
Max.
1.4
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min. Typ.
BVDSS
RDS(on)
VGS(th)
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
55 —
—8
2.0
——
IDSS Drain-to-Source leakage current
——
Max. Units
—V
10 mΩ
4.0 V
2
μA
10
www.goodark.com
Page 1 of 4
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=34A
VDS=VGS,ID=250μA
VDS=55V,VGS=0V
VDS=44V,
VGS=0V,TJ=150ْC
Rev.1.0
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet SSF5510G.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSF5510G | N-Channel MOSFET | GOOD-ARK |
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