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SSF6NS70UD fiches techniques PDF

GOOD-ARK - N-Channel MOSFET

Numéro de référence SSF6NS70UD
Description N-Channel MOSFET
Fabricant GOOD-ARK 
Logo GOOD-ARK 





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SSF6NS70UD fiche technique
Main Product Characteristics
VDSS
700V
RDS(on) 0.95Ω (typ.)
ID 6A
TO-252 (DPAK)
Features and Benefits
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Lead free product
SSF6NS70UD
700V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
The SSF6NS70UD series MOSFET is a new technology, which combines an innovative super junction
technology and advance process. This new technology achieves low RDS(ON), energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=100mH
Avalanche Current @ L=100mH
Operating Junction and Storage Temperature Range
Max.
6
3.7
18
33
0.264
700
± 30
72
1.2
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
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