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PN4HN60-DBI-T1 fiches techniques PDF

Chipown - N-Channel Superjunction MOSFET

Numéro de référence PN4HN60-DBI-T1
Description N-Channel Superjunction MOSFET
Fabricant Chipown 
Logo Chipown 





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PN4HN60-DBI-T1 fiche technique
PN4HN60
N-Channel Superjunction MOSFET
600V, 4.5A, 0.95
Chipown
NeoFET®
General Description
The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep
trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific
on-resistance compared to that of a conventional MOSFET. By combining the experience of the leading SJ
MOSFET supplier, utilizing this advanced technology and precise process control, NeoFET provides superior
switching performance and ruggedness. The NeoFET fits the PC ATX Power, Server, Telecom, Adapter, LCD and
PDP TV, Lighting, UPS and industrial power applications.
Features
RDS(on) = 0.85( Typ.)@ VGS = 10V, ID = 2.8A
Extremely high dv/dt capablity
Very high commutation ruggedness
Extremely low losses due to very low Rdson*Qg
Ultra low gate charge ( Typ. Qg = 15nC)
Low effective output capacitance
100% avalanche tested
JEDEC qualified, Pb-free plating
Applications
PC ATX Power
Adapter
LCD and PDP TV
Lighting
Server, Telecom,
UPS
Switching applications
Pin Assignments
Order codes
PN4HN60-DAI-T1
PN4HN60-DBI-T1
Package
TO251
TO252
8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn
Rev.A.1111
1/7

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