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Inchange Semiconductor - Silicon NPN Power Transistors

Numéro de référence 2N3904
Description Silicon NPN Power Transistors
Fabricant Inchange Semiconductor 
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2N3904 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3904
DESCRIPTION
·Low Saturation Voltage-
: VCE(sat)= 200mV(Max)@ IC =10mA
·Complement to Type 2N3906.
APPLICATIONS
·Designed for high-speed switching and Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICP Collector Current-Peak
IBM Peak base current
PC Collector Power Dissipation @TC=25
TJ Junction Temperature
Tstg Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
VALUE
60
40
6
200
300
100
625
150
-55~150
UNIT
V
V
V
mA
mA
mA
mW
MAX
250
UNIT
K/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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