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Inchange Semiconductor - Silicon NPN Power Transistors

Numéro de référence 2N5686
Description Silicon NPN Power Transistors
Fabricant Inchange Semiconductor 
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2N5686 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5686
DESCRIPTION
·High DC Current Gain-hFE=15~60@IC = 25A
·Low Saturation Voltage-
VCE(sat)= 1.0V(Max)@ IC = 25A
·Minimum Lot-to-Lot variations for
robust device performance and reliable operation.
APPLICATIONS
·Designed for use in high power amplifer and switching
circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
50 A
IB Base Current-Continuous
15 A
PC Collector Power Dissipation @TC=25300
W
TJ Junction Temperature
200
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.584 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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