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2N5937 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistors

Numéro de référence 2N5937
Description Silicon NPN Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2N5937 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N5937
DESCRIPTION
·DC Current Gain-
: hFE= 20-100@IC= 30A
·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ IC= 20A
APPLICATIONS
·Designed for use in power switching circuits,audio amplifiers,
series and shunt-regulators, driver and output stages,DC-DC
converters, inverters, and solenoid /relay driver service.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
170 V
VCEO
Collector-Emitter Voltage
160 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
30 A
IB Base Current-Continuous
7.5 A
PC Collector Power Dissipation @TC=25175
W
TJ Junction Temperature
150
Tstg Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.875 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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