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Inchange Semiconductor - Silicon PNP Power Transistors

Numéro de référence 2SB1144
Description Silicon PNP Power Transistors
Fabricant Inchange Semiconductor 
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2SB1144 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1144
DESCRIPTION
··Low Collector Saturation Voltage
: VCE(sat)= -0.3V(Max)@IC= -0.5A
·Wide Area of Safe Operation
·Complement to Type 2SD1684
APPLICATIONS
·Designed for 100V/1.5A Switching Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous -1.5 A
ICP Collector Current-Pulse
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ Junction Temperature
-2 A
10
W
1.5
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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