2N6051 Datasheet PDF - Inchange Semiconductor
| Part Number | 2N6051 | |
| Description | Silicon PNP Power Transistors | |
| Manufacturers | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
isc Product Specification
2N6051
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE = 750 (Min) @ IC = -6A
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= -80V(Min)
·Complement to type 2N6058
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80 V
VCEO Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current -Continuous
-12 A
ICM Collector Current-Peak
-20 A
IB Base Current
-0.2 A
PC Collector Power Dissipation@TC=25℃ 150
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX
1.17
UNIT
℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2N6051 electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 2N6051.PDF Datasheet ] | |
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