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PDF 2SB1089 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1089 | |
| Descripción | Silicon PNP Power Transistors | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1089
DESCRIPTION
·High Collector Current:: IC= -3A
·Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -2A
·Complement to Type 2SD1567
APPLICATIONS
·Designed for power supplies or a variety of drives in audio
and other equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60 V
VCEO Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-3 A
ICM Collector Current-Peak
-5 A
IB Base Current-Continuous
Total Power Dissipation
@ Ta=25℃
PC
Total Power Dissipation
@ TC=25℃
TJ Junction Temperature
-0.6 A
1.3
W
30
150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1089.PDF ] | |
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