DataSheetWiki


GS8673ET18BGK fiches techniques PDF

GSI Technology - 72Mb SigmaDDR-IIIe Burst of 2 ECCRAM

Numéro de référence GS8673ET18BGK
Description 72Mb SigmaDDR-IIIe Burst of 2 ECCRAM
Fabricant GSI Technology 
Logo GSI Technology 





1 Page

No Preview Available !





GS8673ET18BGK fiche technique
GS8673ET18/36BK-675/625/550/500
260-Ball BGA
Commercial Temp
Industrial Temp
72Mb SigmaDDR-IIIe™
Burst of 2 ECCRAM™
675 MHz–500 MHz
1.35V VDD
1.2V to 1.5V VDDQ
Features
• On-Chip ECC with virtually zero SER
• Configurable Read Latency (3.0 or 2.0 cycles)
• Simultaneous Read and Write SigmaDDR-IIIe™ Interface
• Common I/O Bus
• Double Data Rate interface
• Burst of 2 Read and Write
• Pipelined read operation
• Fully coherent Read and Write pipelines
• 1.35V nominal VDD
• 1.2V JESD8-16A BIC-3 Compliant Interface
• 1.5V HSTL Interface
• ZQ pin for programmable output drive impedance
• ZT for programmable input termination impedance
• Configurable Input Termination
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 260-ball, 14 mm x 22 mm, 1 mm ball pitch BGA package
–K: 5/6 RoHS-compliant package
–GK: 6/6 RoHS-compliant package
SigmaDDR-IIIeFamily Overview
SigmaDDR-IIIe ECCRAMs are the Common I/O half of the
SigmaQuad-IIIe/SigmaDDR-IIIe family of high performance
ECCRAMs. Although very similar to GSI's second generation
of networking SRAMs (the SigmaQuad-II/SigmaDDR-II
family), these third generation devices offer several new
features that help enable significantly higher performance.
Clocking and Addressing Schemes
The GS8673ET18/36BK SigmaDDR-IIIe ECCRAMs are
synchronous devices. They employ dual, single-ended master
clocks, CK and CK. These clocks are single-ended clock
inputs, not differential inputs to a single differential clock input
buffer. CK and CK are used to control the address and control
input registers, as well as all output timing.
The KD and KD clocks are dual mesochronous (with respect to
CK and CK) input clocks that are used to control the data input
registers. Consequently, data input setup and hold windows
can be optimized independently of address and control input
setup and hold windows.
Each internal read and write operation in a SigmaDDR-IIIe B2
ECCRAM is two times wider than the device I/O bus. An input
data bus de-multiplexer is used to accumulate incoming data
before it is simultaneously written to the memory array. An
output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore, the address
field of a SigmaDDR-IIIe B2 ECCRAM is always one address
pin less than the advertised index depth (e.g. the 4M x 18 has
2M addressable index).
On-Chip Error Correction Code
GSI's ECCRAMs implement an ECC algorithm that detects
and corrects all single-bit memory errors, including those
induced by Soft Error Rate (SER) events such as cosmic rays,
alpha particles, etc. The resulting SER of these devices is
anticipated to be <0.002 FITs/Mb — a 5-order-of-magnitude
improvement over comparable SRAMs with no On-Chip ECC,
which typically have an SER of 200 FITs/Mb or more. SER
quoted above is based on reading taken at sea level.
Speed Bin
-675
-625
-550
-500
Parameter Synopsis
Operating Frequency
675 / 450 MHz
625 / 400 MHz
550 / 375 MHz
500 / 333 MHz
Data Rate (per pin)
1350 / 900 Mbps
1250 / 800 Mbps
1100 / 750 Mbps
1000 / 666 Mbps
Read Latency
3.0 / 2.0
3.0 / 2.0
3.0 / 2.0
3.0 / 2.0
VDD
1.3V to 1.4V
1.3V to 1.4V
1.25V to 1.4V
1.25V to 1.4V
Rev: 1.06 5/2012
1/34
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology

PagesPages 30
Télécharger [ GS8673ET18BGK ]


Fiche technique recommandé

No Description détaillée Fabricant
GS8673ET18BGK 72Mb SigmaDDR-IIIe Burst of 2 ECCRAM GSI Technology
GSI Technology

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche