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Numéro de référence | BFU725F-N1 | ||
Description | NPN wideband silicon germanium RF transistor | ||
Fabricant | NXP Semiconductors | ||
Logo | |||
1 Page
BFU725F/N1
NPN wideband silicon germanium RF transistor
Rev. 2 — 3 November 2011
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
Low noise high gain microwave transistor
Noise figure (NF) = 0.7 dB at 5.8 GHz
High maximum stable gain 27 dB at 1.8 GHz
110 GHz fT silicon germanium technology
1.3 Applications
2nd LNA stage and mixer stage in DBS LNB’s
Satellite radio
Low noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog/digital cordless applications
Ka band oscillators (DRO’s)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCBO
VCEO
VEBO
IC
Ptot
hFE
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
Conditions
open emitter
open base
open collector
Tsp 90 C
IC = 10 mA; VCE = 2 V;
Tj = 25 C
Min Typ
--
--
--
- 25
[1] -
-
160 280
Max
10
2.8
1.0
40
136
400
Unit
V
V
V
mA
mW
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Pages | Pages 12 | ||
Télécharger | [ BFU725F-N1 ] |
No | Description détaillée | Fabricant |
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