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Numéro de référence | 2N6545 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6545
DESCRIPTION
·Excellent Safe Operating Area
·High Voltage,High Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for 115 and 220 volt line operated switch-mode
applications such as:
·Switching regulators
·PWM inverters and motor controls
·Solenoid and relay drivers
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
850 V
VCEO Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
8A
ICM Collector Current-Peak
16 A
PC Collector Power Dissipation@TC=25℃ 125
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.4
UNIT
℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 2N6545 ] |
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