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2N6581 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence 2N6581
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2N6581 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6581
DESCRIPTION
·Excellent Safe Operating Area
·High Voltage,High Speed
·Low Saturation Voltage
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min)
APPLICATIONS
·Off-line power supplies
·Switching amplifiers
·Inverters/Converters
·Motor speed control circuits
·Switching regulator
·Solenoid& relay drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
550 V
VCEO Collector-Emitter Voltage
450 V
VEBO
Emitter-Base Voltage
9.0 V
IC Collector Current-Continuous
10 A
ICM Collector Current-Peak
16 A
IB Base Current-Continuous
5A
PC Collector Power Dissipation@TC=25125
W
TJ Junction Temperature
150
Tstg Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.4
UNIT
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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