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Numéro de référence | 2SA2169 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2169
DESCRIPTION
·Large current capacitance
·High-speed switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·Complementary to 2SC6017
APPLICATIONS
·relay drivers,lamp drivers,motor drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50 V
VCEO
Collector-Emitter Voltage
-50 V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous -10 A
ICM Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
Collector Power Dissipation
@Ta=25℃
TJ Junction Temperature
-13 A
20
W
0.95
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 3 | ||
Télécharger | [ 2SA2169 ] |
No | Description détaillée | Fabricant |
2SA2162 | Silicon PNP Epitaxial Transistor | Panasonic Semiconductor |
2SA2164 | Silicon PNP epitaxial planar type For high-frequency amplification | Panasonic Semiconductor |
2SA2166 | SILICON PNP EPITAXIAL TYPE | Isahaya Electronics Corporation |
2SA2167 | SILICON PNP EPITAXIAL TYPE | Isahaya Electronics Corporation |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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