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2SA2169 fiches techniques PDF

Inchange Semiconductor - Silicon PNP Power Transistor

Numéro de référence 2SA2169
Description Silicon PNP Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SA2169 fiche technique
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2169
DESCRIPTION
·Large current capacitance
·High-speed switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·Complementary to 2SC6017
APPLICATIONS
·relay drivers,lamp drivers,motor drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50 V
VCEO
Collector-Emitter Voltage
-50 V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous -10 A
ICM Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25
Collector Power Dissipation
@Ta=25
TJ Junction Temperature
-13 A
20
W
0.95
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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