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PDF NJD2873T4G Data sheet ( Hoja de datos )
| Número de pieza | NJD2873T4G | |
| Descripción | Power Transistors | |
| Fabricantes | ON Semiconductor | |
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NJD2873, NJVNJD2873
Power Transistors
NPN Silicon DPAK For Surface Mount
Applications
Designed for high−gain audio amplifier applications.
Features
• High DC Current Gain
• Low Collector−Emitter Saturation Voltage
• High Current−Gain − Bandwidth Product
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VCB
VCEO
VEB
IC
ICM
IB
PD
50 Vdc
50 Vdc
5 Vdc
2 Adc
3 Adc
0.4 Adc
15 W
0.1 W/°C
Total Device Dissipation
@ TA = 25°C*
Derate above 25°C
PD
1.68 W
0.011
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg − 65 to +175 °C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2013
September, 2016 − Rev. 17
1
www.onsemi.com
SILICON
POWER TRANSISTORS
2 AMPERES
50 VOLTS
15 WATTS
COLLECTOR
2,4
1
BASE
3
EMITTER
4
12
3
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
AYWW
J
2873G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Device
ORDERING INFORMATION
Device
Package Shipping†
NJD2873T4G
DPAK
2,500
(Pb−Free) Units / Reel
NJVNJD2873T4G
DPAK
2,500
(Pb−Free) Units / Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NJD2873T4/D
1 page  
NJD2873, NJVNJD2873
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
A
E
b3 B
C
A
c2
4
L3
D
12 3
DETAIL A
H
Z
L4
b2
NOTE 7
c
e
b
SIDE VIEW
TOP VIEW
0.005 (0.13) M C
BOTTOM VIEW
L2
GAUGE
PLANE
H
C
SEATING
PLANE
ZZ
L
L1
A1
DETAIL A
ROTATED 905 CW
BOTTOM VIEW
ALTERNATE
CONSTRUCTIONS
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
3.00
0.118
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
INCHES
DIM MIN MAX
A 0.086 0.094
A1 0.000 0.005
b 0.025 0.035
b2 0.028 0.045
b3 0.180 0.215
c 0.018 0.024
c2 0.018 0.024
D 0.235 0.245
E 0.250 0.265
e 0.090 BSC
H 0.370 0.410
L 0.055 0.070
L1 0.114 REF
L2 0.020 BSC
L3 0.035 0.050
L4 −−− 0.040
Z 0.155 −−−
MILLIMETERS
MIN MAX
2.18 2.38
0.00 0.13
0.63 0.89
0.72 1.14
4.57 5.46
0.46 0.61
0.46 0.61
5.97 6.22
6.35 6.73
2.29 BSC
9.40 10.41
1.40 1.78
2.90 REF
0.51 BSC
0.89 1.27
−−− 1.01
3.93 −−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
5.80
0.228
1.60
0.063
6.17
0.243
ǒ ǓSCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NJD2873T4/D
5
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| PDF Descargar | [ Datasheet NJD2873T4G.PDF ] | |
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