|
|
Numéro de référence | CJ3401A | ||
Description | P-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | ZPSEMI | ||
Logo | |||
1 Page
CJ3401A
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401A P-Channel Enhancement Mode Field Effect Transistor
FEATURE
z High dense cell design for extremely low RDS(ON).
z Exceptional on-resistance and maximum DC current capability
MARKING: R1A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
G
D
S
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient (t<5s)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
RθJA
TJ
TSTG
Value
-30
±12
-4.2
400
313
150
-55~+150
Unit
V
V
A
mW
℃/W
℃
℃
www.zpsemi.com
1 of 3
|
|||
Pages | Pages 3 | ||
Télécharger | [ CJ3401A ] |
No | Description détaillée | Fabricant |
CJ3401 | P-Channel Enhancement Mode MOSFET | ZPSEMI |
CJ3401 | MOSFETS | JCST |
CJ3401-HF | MOSFET ( Transistor ) | Comchip |
CJ3401A | P-Channel Enhancement Mode Field Effect Transistor | ZPSEMI |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |