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ZPSEMI - P-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CJ3401A
Description P-Channel Enhancement Mode Field Effect Transistor
Fabricant ZPSEMI 
Logo ZPSEMI 





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CJ3401A fiche technique
CJ3401A
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401A P-Channel Enhancement Mode Field Effect Transistor
FEATURE
z High dense cell design for extremely low RDS(ON).
z Exceptional on-resistance and maximum DC current capability
MARKING: R1A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
G
D
S
Maximum ratings ( Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient (t<5s)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
RθJA
TJ
TSTG
Value
-30
±12
-4.2
400
313
150
-55~+150
Unit
V
V
A
mW
/W
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