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PDF HR5459-25B Data sheet ( Hoja de datos )
| Número de pieza | HR5459-25B | |
| Descripción | GaN Hybrid Power Amplifier | |
| Fabricantes | RFHIC | |
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GaN Hybrid Power Amplifier HR5459-25B
Product Features
• GaN on SiC HEMT
• Surface Mount Hybrid Type
• Compact Size & Mass
• High Efficiency
• Low Cost
• Custom design available
Applications
• Radar Systems
• Pulse amplifier application
Package Type : NP-36
Description
The HR5459-25B is designed for Radar system application frequencies from 5.4GHz to 5.9GHz and GaN HEMT technology has been
used that performs high breakdown voltage, wide bandwidth and high efficiency. HR5459-25B has been designed 2 stages to have
higher Gain at the wide frequency range of 5.4GHz ~5.9GHz. GaN HEMT technology has been used to every amplifier in it for better
reliability. Since it is high efficiency amplifier, it can perform at max 10% duty cycle and 50us of pulse width.
Electrical Specifications @ Vds =50V, Ta=25℃
PARAMETER
UNIT
MIN
TYP
Frequency Range
MHz
5400
-
Power Gain
- 20
Power Flatness dB -
-
Input Return Loss
- -8
Pout @ Psat
W 20
25
Harmonics 1 to N
dBc
-25
Pulse Droop
dB
0.5
Pulse
Response
Fall Time
Rise Time
ns
ns
Drain Efficiency % -
40
Ids
A-
1.25
Supply Voltage
V -3.5
V-
-3.3
50
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Test condition = 50us (pulse width), 10%(duty cycle), Pin=25.5dBm
Note
HR Series have internal DC blocking capacitors at the RF input and output ports
MAX
5900
-
1
-
-
200
200
-
-2.7
CONDITION
ZS = ZL = 50 ohm
Amp : Idq1 = 10mA
Idq2 = 10mA
Pout @ Peak
Gate Bias (Vgs1 and Vgs2)
Main Bias(Vds)
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
㎜
TYP
2
20.5 x 12.5 x 4.8
REMARK
-
-
Korean Facilities : 82-31-250-5078 / [email protected]
US Facility : 919-677-8780 / [email protected]
1/6
All specifications may change without notice
Version 1.0
1 page  
GaN Hybrid Power Amplifier HR5459-25B
Precautions
This product is a Gallium Nitride Transistor.
The Gallium Nitride Transistor requires a Negative Voltage Bias which operates alongside a Positive Voltage Bias. These Biases are
applied in accordance to the Sequence during Turn-On and Turn-Off.
The Pallet Amplifier does not have a built-in Bias Sequence Circuit. Therefore, users need to either apply positive voltages and
negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier.
The required sequence for power supply is as follows.
During Turn-On
1. Connect GND.
2. Apply Vgs1 and Vgs2.
3. Apply Vds.
4. Apply the RF Power.
During Turn-Off
1. Turn off RF power.
2. Turn off Vds, and then, turn off the Vgs1 and Vgs2.
3. Remove all connections.
Turn On
Turn Off
- Sequence Timing Diagram -
Korean Facilities : 82-31-250-5078 / [email protected]
US Facility : 919-677-8780 / [email protected]
5/6
All specifications may change without notice
Version 1.0
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HR5459-25B.PDF ] | |
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