(PDF) MRF475 Datasheet - HG RF POWER TRANSISTOR

Número de pieza	MRF475
Descripción	HG RF POWER TRANSISTOR
Fabricantes	HGSemi
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No Preview Available ! HG Semiconductors MRF475HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION: The HG MRF475 is Designed for 13.6 V FM Large-Signal Amplifier Applications to 30 MHz. MAXIMUM RATINGS IC 4.0 A VCE 18 V VCB 48 V PDISS 10 W @ TC = 25 °C TSTG -65 °C to +150 °C TJ -65 °C to +150 °C θJC 12.5 °C/W PACKAGE STYLE TO-220AB (COMMON EMITTER) 1 = BASE 2 = COLLECTOR 3 = EMITTER TAB = COLLECTOR CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS BVCEO IC = 20 mA BVCES IC = 50 mA BVEBO IE = 5.0 mA ICBO VCB = 25 V hFE VCE = 5.0 V IC = 500 mA Cob VCB = 13.6 V f = 1.0 MHz GPE η IMD VCC = 13.6 V f1 = 30 MHz ICQ = 20 mA Pout = 12 W (PEP) f2 = 30.001 MHz MINIMUM TYPICAL MAXIMUM 18 48 4.0 1.0 30 60 125 145 10 12 40 -30 UNITS V V V mA --- pF dB % dB Note : Above parameters , ratings , limits and conditions are subject to change www.HGSemi.com Sep. 1998 1 page

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PDF MRF475 Data sheet ( Hoja de datos )