(PDF) MRF476 Datasheet - HG RF POWER TRANSISTOR

Número de pieza	MRF476
Descripción	HG RF POWER TRANSISTOR
Fabricantes	HGSemi
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No Preview Available ! HG Semiconductors MRF476HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION: The HG MRF476 is Designed for 12.5 V FM Large-Signal Amplifier Applications to 30 MHz. PACKAGE STYLE TO-220AB (COMMON EMITTER) MAXIMUM RATINGS IC 1.0 A VCE 18 V VCB 36 V PDISS 10 W @ TC = 25 °C TSTG -65 °C to +150 °C JC 17.5 °C/W 1 = BASE 2 = COLLECTOR 3 = EMITTER TAB = COLLECTOR CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS BVCEO IC = 10 mA BVCES IC = 25 mA BVEBO IE = 1.0 mA ICBO VCB = 15 V hFE VCE = 5.0 V IC = 250 mA MINIMUM TYPICAL MAXIMUM 18 36 4.0 0.5 10 50 UNITS V V V mA --- Cob VCB = 12.5 V f = 1.0 MHz 25 35 pF GPE IMD VCC = 12.5 V f1 = 30 MHz ICQ = 20 mA Pout = 3.0 W (PEP) f2 = 30.001 MHz 15 40 18 -35 -30 dB % dB Note : Above parameters , ratings , limits and conditions are subject to change www.HGSemi.com Sep. 1998 1 page

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PDF MRF476 Data sheet ( Hoja de datos )