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Numéro de référence | MMBD352 | ||
Description | Dual Hot Carrier Mixer Diodes | ||
Fabricant | Galaxy Microelectronics | ||
Logo | |||
1 Page
Dual Hot Carrier Mixer Diodes
FEATURES
z Very low capacitance—
Less than 1.0pF@zero V.
Pb
Lead-free
z Low forward voltage—IF=10mA.
z Power dissipation Pd=300mW
z Pb-Free package is available.
APPLICATIONS
z Designed primarily for UHF mixer
applications.
Production specification
MMBD352/353/354/355
MMBD352
MMBD353
MMBD354
MMBD355
ORDERING INFORMATION
Type No.
Marking
MMBD352
MMBD353
MMBD354
MMBD355
M5G
M4F
M6H
MJ1
SOT-23
Package Code
SOT-23
SOT-23
SOT-23
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Continuous reverse voltage
VR
Power Dissipation
Pd
Thermal Resistance,Junction-to-Ambient
RθJA
Junction and storage temperature
TJ,TSTG
Limits
7.0
300
417
-55 to +150
Unit
V
mW
℃/W
℃
C138
Rev.A
www.gmicroelec.com
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Pages | Pages 3 | ||
Télécharger | [ MMBD352 ] |
No | Description détaillée | Fabricant |
MMBD352 | SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE | Pan Jit International |
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MMBD352 | Dual Hot Carrier Mixer Diodes | LGE |
MMBD352 | Dual Hot Carrier Mixer Diodes | Galaxy Microelectronics |
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