DataSheetWiki


MMBD352 fiches techniques PDF

Galaxy Microelectronics - Dual Hot Carrier Mixer Diodes

Numéro de référence MMBD352
Description Dual Hot Carrier Mixer Diodes
Fabricant Galaxy Microelectronics 
Logo Galaxy Microelectronics 





1 Page

No Preview Available !





MMBD352 fiche technique
Dual Hot Carrier Mixer Diodes
FEATURES
z Very low capacitance—
Less than 1.0pF@zero V.
Pb
Lead-free
z Low forward voltage—IF=10mA.
z Power dissipation Pd=300mW
z Pb-Free package is available.
APPLICATIONS
z Designed primarily for UHF mixer
applications.
Production specification
MMBD352/353/354/355
MMBD352
MMBD353
MMBD354
MMBD355
ORDERING INFORMATION
Type No.
Marking
MMBD352
MMBD353
MMBD354
MMBD355
M5G
M4F
M6H
MJ1
SOT-23
Package Code
SOT-23
SOT-23
SOT-23
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Parameter
Symbol
Continuous reverse voltage
VR
Power Dissipation
Pd
Thermal Resistance,Junction-to-Ambient
RθJA
Junction and storage temperature
TJ,TSTG
Limits
7.0
300
417
-55 to +150
Unit
V
mW
/W
C138
Rev.A
www.gmicroelec.com
1

PagesPages 3
Télécharger [ MMBD352 ]


Fiche technique recommandé

No Description détaillée Fabricant
MMBD352 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE Pan Jit International
Pan Jit International
MMBD352 SURFACE MOUNT SCHOTTKY BARRIER DIODE Won-Top Electronics
Won-Top Electronics
MMBD352 Dual Hot Carrier Mixer Diodes LGE
LGE
MMBD352 Dual Hot Carrier Mixer Diodes Galaxy Microelectronics
Galaxy Microelectronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche