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Datasheet 4N37-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
4N3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 4N30 | STANDARD THRU HOLE CASE 730A-04 MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 4N29/D
6-Pin DIP Optoisolators Darlington Output
The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series i  Motorola Inc data | | |
| 2 | 4N30 | PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR) Toshiba Semiconductor transistor | | |
| 3 | 4N30 | GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
4N29
4N30
4N31
4N32
4N33
FEATURES
• High sensitivity to low input drive current • Meets or exceeds  QT Optoelectronics data | | |
| 4 | 4N30 | General Purpose 6-Pin Photodarlington Optocoupler 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler
April 2007
4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler
Features
■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered
tm
Description
The 4N29, 4N3  Fairchild Semiconductor data | | |
| 5 | 4N30Z | 40A 300V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 4N30Z
4A, 300V N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The U TC 4N30Z is an N-ch annel mod e p ower MOSF ET using UTC’s advanc ed techn ology to provid e customers with a minimum on-state res istance, lo w gate charge a nd superior s witching performance  UNISONIC TECHNOLOGIES mosfet | | |
| 6 | 4N31 | STANDARD THRU HOLE CASE 730A-04 MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 4N29/D
6-Pin DIP Optoisolators Darlington Output
The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series i Motorola Inc data | | |
| 7 | 4N31 | PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR) Toshiba Semiconductor transistor | |
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