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JCST - MOSFETS

Numéro de référence CJ2310
Description MOSFETS
Fabricant JCST 
Logo JCST 





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CJ2310 fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2310 N-Channel MOSFET
DESCRIPTION
The CJ2310 uses advanced trench technology to provide excellent
RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V.
This device is suitable for use as a battery protection or in other switching
application.
FEATURES
High power and current handing capability
Lead free product is acquired
Surface mount package
APPLICATION
Battery Switch
DC/DC Converter
MARKING: S10
Maximum ratings (Ta=25unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
Value
60
±20
3
10
0.35
357
150
-55~+150
Unit
V
V
A
A
W
/W
C,Jun,2013

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