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CJ2333 fiches techniques PDF

JCST - P-Channel MOSFET

Numéro de référence CJ2333
Description P-Channel MOSFET
Fabricant JCST 
Logo JCST 





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CJ2333 fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2333 P-Channel MOSFET
SOT-23
DESCRIPTION
The CJ2333 uses advanced trench technology and design to
provide excellent RDS(on) with low gate charge.This device is suitable
for use in PWM,load switching and general purpose applications.
1. GATE
2. SOURCE
3. DRAIN
FEATURE
TrenchFET Power MOSFET
APPLICATION
DC/DC Converter
Load Switch for Portable Devices
Battery Switch
MARKING: S33
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (t=300µs)
Power Dissipation
Thermal Resistance from Junction to Ambient
VDS
VGS
ID
IDM
PD
RθJA
-12
±8
-6 a
-20
0.35 b
1.1a
357 b
113 a
Junction Temperature
Storage Temperature
TJ
TSTG
150
-55~ +150
a. Device mounted on FR-4 substrate board, with minimum recommended pad layout, single side.
b. Device mounted on no heat sink.
Unit
V
V
A
A
W
W
/W
/W
A-2,Dec,2012

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