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Numéro de référence | CJ3139KDW | ||
Description | MOSFETS | ||
Fabricant | JCST | ||
Logo | |||
1 Page
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETS
CJ3139KDW Dual P-Channel Power MOSFET
GENERRAL DESCRIPTION
This Dual P-Channel MOSFET has been designed using advanced
Power Trench process to optimize the RDS(ON).
Including two P-ch CJ3139K MOSFET (independently) in a package.
SOT-363
FEATURE
z High-Side Switching
z Low On-Resistance
z Low Threshold
z Fast Switching Speed
APPLICATION
z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories
z Battery Operated Systems
z Power Supply Converter Circuits
z Load/Power Switching Cell Phones, Pagers
BDTICMARKING:39K
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current -Pulsed(note1)
Power Dissipation (note 2)
Thermal Resistance from Junction to Ambient
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
ID(DC)
IDM(pulse)
PD
RθJA
Tj
Tstg
Value
-20
±12
-0.66
-2.64
150
833
150
-55 ~+150
Units
V
A
mW
℃/W
℃
www.BDTIC.com/jcst
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Pages | Pages 2 | ||
Télécharger | [ CJ3139KDW ] |
No | Description détaillée | Fabricant |
CJ3139KDW | Dual P-Channel Power MOSFET | ZPSEMI |
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