(PDF) CJ3420 Datasheet

Número de pieza	CJ3420
Descripción	MOSFETS
Fabricantes	JCST
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ3420 N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The CJ3420 uses advanced trench technology to provide excellent RDS(on).This device is suitable for use as a uni-directional or bi-directional load switch. MARKING: R20 SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Body-Diode Continuous Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID IDM IS PD RθJA TJ Tstg Value 20 ±12 6 25 2 0.35 357 150 -55 ~+150 Unit V A W ℃/W ℃ B,May,2011 1 page

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PDF CJ3420 Data sheet ( Hoja de datos )