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PDF VNP35N07-E Data sheet ( Hoja de datos )
| Número de pieza | VNP35N07-E | |
| Descripción | fully autoprotected Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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VNP35N07-E, VNB35N07-E,
VNV35N07-E
OMNIFET: fully autoprotected Power MOSFET
3
2
1
TO-220
3
1
D2PAK
10
1
PowerSO-10
Features
Type
VNP35N07-E
VNB35N07-E
VNV35N07-E
Vclamp
70 V
70 V
70 V
RDS(on)
0.028 Ω
0.028 Ω
0.028 Ω
Ilim
35 A
35 A
35 A
Datasheet - production data
• Diagnostic feedback through input pin
• ESD protection
• Direct access to the gate of the Power
MOSFET (analog driving)
• Compatible with standard Power MOSFET
• Standard TO-220 package
• Compliant with 2002/95/EC European directive
Description
The VNP35N07-E, VNB35N07-E and
VNV35N07-E are monolithic devices made using
STMicroelectronics VIPower® technology,
intended for replacement of standard Power
MOSFETs in DC to 50 KHz applications.
Built-in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
• Automotive qualified
• Linear current limitation
• Thermal shutdown
• Short circuit protection
• Integrated clamp
• Low current drawn from input pin
Package
TO-220
D2PAK
PowerSO-10
Table 1. Device summary
Order codes
Tube
VNP35N07-E
VNB35N07-E
VNV35N07-E
Tape and reel
VNP35N07TR-E
VNB35N07TR-E
VNV35N07TR-E
February 2015
This is information on a product in full production.
DocID023779 Rev 3
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www.st.com
1 page  
VNP35N07-E, VNB35N07-E, VNV35N07-E
1 Block diagram
Figure 1. Block diagram
Block diagram
1. PowerSO-10 pin configuration: INPUT = 6, 7, 8, 9, 10; SOURCE = 1, 2, 4, 5; DRAIN = TAB.
DocID023779 Rev 3
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5 Page 
VNP35N07-E, VNB35N07-E, VNV35N07-E
Figure 6. Waveforms
Electrical specification
Figure 7. Unclamped inductive waveforms
DocID023779 Rev 3
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11 Page | ||
| Páginas | Total 24 Páginas | |
| PDF Descargar | [ Datasheet VNP35N07-E.PDF ] | |
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