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VNV35N07-E fiches techniques PDF

STMicroelectronics - fully autoprotected Power MOSFET

Numéro de référence VNV35N07-E
Description fully autoprotected Power MOSFET
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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VNV35N07-E fiche technique
VNP35N07-E, VNB35N07-E,
VNV35N07-E
OMNIFET: fully autoprotected Power MOSFET
3
2
1
TO-220
3
1
D2PAK
10
1
PowerSO-10
Features
Type
VNP35N07-E
VNB35N07-E
VNV35N07-E
Vclamp
70 V
70 V
70 V
RDS(on)
0.028 Ω
0.028 Ω
0.028 Ω
Ilim
35 A
35 A
35 A
Datasheet - production data
Diagnostic feedback through input pin
ESD protection
Direct access to the gate of the Power
MOSFET (analog driving)
Compatible with standard Power MOSFET
Standard TO-220 package
Compliant with 2002/95/EC European directive
Description
The VNP35N07-E, VNB35N07-E and
VNV35N07-E are monolithic devices made using
STMicroelectronics VIPower® technology,
intended for replacement of standard Power
MOSFETs in DC to 50 KHz applications.
Built-in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Automotive qualified
Linear current limitation
Thermal shutdown
Short circuit protection
Integrated clamp
Low current drawn from input pin
Package
TO-220
D2PAK
PowerSO-10
Table 1. Device summary
Order codes
Tube
VNP35N07-E
VNB35N07-E
VNV35N07-E
Tape and reel
VNP35N07TR-E
VNB35N07TR-E
VNV35N07TR-E
February 2015
This is information on a product in full production.
DocID023779 Rev 3
1/24
www.st.com

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