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Datasheet L8852-PDF.HTML Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
L88 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | L88016 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR polyfet rf devices
L88016
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and Polyfet RF Devices transistor | | |
2 | L8801P | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR polyfet rf devices
L8801P
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and Polyfet RF Devices transistor | | |
3 | L8821P | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR polyfet rf devices
L8821P
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and Polyfet RF Devices transistor | | |
4 | L8828-04 | CW LASER DIODES Hamamatsu Corporation diode | | |
5 | L8828-06 | CW LASER DIODES Hamamatsu Corporation diode | | |
6 | L8828-07 | CW LASER DIODES Hamamatsu Corporation diode | | |
7 | L8828-41 | CW LASER DIODES Hamamatsu Corporation diode | |
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