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Taiwan Semiconductor - 1.0A Surface Mount Schottky Barrier Rectifier

Numéro de référence SD1004
Description 1.0A Surface Mount Schottky Barrier Rectifier
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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SD1004 fiche technique
SD1002 THRU SD1006
1.0A Surface Mount Schottky Barrier Rectifier
Voltage Range
20 to 60 Volts
450m Watts Power Dissipation
Features
Schottky barrier chip
Guard ring die construction for transient protection
Low power loss, high efficiency
High surge capability
High current capability and low forward voltage drop
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection application
Plastic material: UL flammability
Classification rating 94V-0
Mechanical Data
0.053(1.35)
Max.
SOD-123
0.022(0.55)
Typ. Min.
0.152(3.85)
0.140(3.55)
0.010(0.25)
Min.
0.112(2.85)
0.100(2.55)
Case: SOD-123, Plastic
Leads: Solderable per MIIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Date Code and Type Code or Date
Code only
Type Code: SL
Weight: 0.01 grams (approx.)
0.006(0.15)
Typ. Min.
0.067(1.70)
0.55(1.40)
0.004(0.10)
Max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol SD SD SD SD Units
1002 1003 1004 1006
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage, @ IR=1.0mA
DC Blocking Voltage
VRRM
VRWM
VR
20 30 40 60
V
RMS Reverse Voltage
VR(RMS) 28 42 V
Average Rectifier Output Current @ TL= 90OC
Io
1.0 A
Non-Repetitive Peak Forward Surge
Current 8.3ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC Method)
IFSM
25 A
Power Dissipation (Note 2)
Pd 450 mW
Typical Thermal Resistance Junction to Ambient
Air (Note 2)
RθJA
222 OC/W
Operating and Storage Temperature Range
Electrical Characteristics
TJ, TSTG
-65 to + 125
OC
Maximum Forward Voltage (Note 1) IF=1.0A
VF
0.45 0.50 0.55 0.70
V
Typ Max
Reverse Leakage Current (Note 1)
VR=40V, TA=25
VR=40V, TA=100
VR=4V, TA=25
VR=4V, TA=100
VR=6V, TA=25
VR=6V, TA=100
Junction Capacitance VR=4V, f=1.0MHz
IR
Cj
1.0 1.0
mA
10
_ 10 50
mA
uA
12
mA
15 75
uA
1.5 3
mA
_ 110 _ _ pF
Notes: 1. Pulse Test: Pulse width = 300 us, Duty Cycle2%.
2. Valid Provided that Leads are Kept at Ambient Temperature at a Distance of 9.5mm from
the case.
- 46 -

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