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PDF Si4320DY Data sheet ( Hoja de datos )
| Número de pieza | Si4320DY | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 30-V (D-S) MOSFET
Si4320DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.003 at VGS = 10 V
30
0.004 at VGS = 4.5 V
ID (A)
25
22
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4320DY-T1-E3 (Lead (Pb)-free)
Si4320DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Gen II
• Ultra Low On-Resistance Using High
Density TrenchFET Power MOSFET
Technology
APPLICATIONS
• Synchronous Buck Low-Side
- Notebook
- Server
- Workstation
• Synchronous Rectifier-POL
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
25
20
17
13
Pulsed Drain Current (10 µs Pulse Width)
IDM 70
Continuous Source Current (Diode Conduction)a
IS 2.9 1.3
Avalanche Current
IAS 50
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
3.5
2.2
1.6
1
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
29
67
13
Maximum
35
80
16
Unit
°C/W
Document Number: 72212
S09-0221-Rev. C, 09-Feb-09
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
Si4320DY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
10 - 3
2
1
Duty Cycle = 0.5
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 67 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 - 2
10 - 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72212.
Document Number: 72212
S09-0221-Rev. C, 09-Feb-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet Si4320DY.PDF ] | |
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