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Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence BUL810
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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BUL810 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL810
DESCRIPTION
·High Voltage Capability
·High Switching Speed
APPLICATIONS
Designed for use in lighting applications and low cost
swith-mode power supplies.
·Electronic transformer for halogen lamps
·Electronic ballasts for fluorescent lighting
·Switch mode power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
1000
V
VCEO Collector-Emitter Voltage
500 V
VEBO Emitter-Base Voltage
9V
IC Collector Current-Continuous
15 A
ICM Collector Current-peak ( tp <5 ms ) 22
A
IBB Base Current-Continuous
5A
IBM Base Current-peak ( tp <5 ms )
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
10 A
125 W
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction-Case
1.0
Thermal Resistance,Junction-Ambient 30
/W
/W
isc Websitewww.iscsemi.cn

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