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Número de pieza | STL7N60M2 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STL7N60M2
N-channel 600 V, 0.92 Ω typ., 5 A MDmesh™ M2
Power MOSFET in a PowerFLAT™ 5x5 package
Datasheet - production data
76
5
10
4
11
12 1
PowerFLAT™ 5x5
Figure 1: Internal schematic diagram
D(5, 6, 11, 12)
GSSS
10 9 8 7
G(10)
D 11
D 12
6D
5D
Features
Order code
STL7N60M2
VDS @ Tjmax
650 V
RDS(on) max
1.05 Ω
ID
5A
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
S(2, 3, 4, 7, 8, 9)
1
NC
Pin 1
identification
234
SSS
Top View
GIPG260120150916ALS
Order code
Table 1: Device summary
Marking
Package
STL7N60M2
7N60M2
PowerFLAT 5x5
Packaging
Tape and reel
January 2015
DocID027417 Rev 1
This is information on a product in full production.
1/13
www.st.com
1 page STL7N60M2
Symbol
Parameter
Table 8: Source drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
VGS = 0 V, ISD = 5 A
ISD = 5 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 19:
"Switching time waveform")
- 5A
- 20 A
- 1.6 V
- 275
ns
- 1.55
µC
- 11
A
trr Reverse recovery time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
ISD = 5 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 19: "Switching time
waveform")
- 376
- 2.1
- 11
ns
µC
A
Notes:
(1)Pulse width is limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID027417 Rev 1
5/13
5 Page STL7N60M2
Dim.
A
A1
A2
b
D
D1
E
E1
E2
e
L
Package mechanical data
Table 9: PowerFLAT 5x5 mechanical data
mm
Min.
Typ.
Max.
0.80 1.0
0.02 0.05
0.25
0.30 0.50
5.00
4.05 4.25
5.00
0.64 0.79
2.25 2.45
1.27
0.45 0.75
Figure 21: PowerFLAT™ 5x5 recommended footprint (dimensions are in mm)
DocID027417 Rev 1
8365434_ A
11/13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet STL7N60M2.PDF ] |
Número de pieza | Descripción | Fabricantes |
STL7N60M2 | N-channel Power MOSFET | STMicroelectronics |
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