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PDF MJD45H11 Data sheet ( Hoja de datos )
| Número de pieza | MJD45H11 | |
| Descripción | Complementary Power Transistors | |
| Fabricantes | ON Semiconductor | |
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MJD44H11 (NPN),
MJD45H11 (PNP)
Complementary Power
Transistors
DPAK for Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
• Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Electrically Similar to Popular D44H/D45H Series
• Low Collector Emitter Saturation Voltage
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25_C, common for NPN and PNP, minus
sign, “−”, for PNP omitted, unless otherwise noted)
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
Symbol
VCEO
VEB
IC
ICM
PD
Max
80
5
8
16
20
0.16
Unit
Vdc
Vdc
Adc
Adc
W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
PD
TJ, Tstg
1.75
0.014
−55 to +150
W
W/°C
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
www.onsemi.com
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS, 20 WATTS
COMPLEMENTARY
COLLECTOR
2, 4
COLLECTOR
2, 4
1
BASE
3
EMITTER
1
BASE
3
EMITTER
4
4
12
3
DPAK
CASE 369C
STYLE 1
4
12 3
DPAK
CASE 369G
STYLE 1
1
2
3
IPAK
CASE 369D
STYLE 1
MARKING DIAGRAMS
AYWW
J4
xH11G
AYWW
J4
xH11G
DPAK
A
Y
WW
J4xH11
G
IPAK
= Assembly Location
= Year
= Work Week
= Device Code
x = 4 or 5
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
September, 2016 − Rev. 20
1
Publication Order Number:
MJD44H11/D
1 page  
MJD44H11 (NPN), MJD45H11 (PNP)
1.4 1.4
1.2 1.2
1.0
−55°C
0.8
25°C
0.6
0.4 150°C
1.0
−55°C
0.8
25°C
0.6
0.4 150°C
0.2 IC/IB = 20
0
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 10. MJD44H11 Saturation Voltage
VBE(sat)
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2 IC = 0.1 A 0.5 A
0
0.1
1
1A
10
IC = 3 A
100
TA = 25°C
IC = 8 A
1000 10,000
IB, BASE CURRENT (mA)
Figure 12. MJD44H11 Collector Saturation
Region
1000
0.2 IC/IB = 20
0
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 11. MJD45H11 Saturation Voltage
VBE(sat)
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2 IC = 0.1 A 0.5 A
0
0.1 1
1A
10
TA = 25°C
IC = 3 A
IC = 8 A
100 1000 10,000
IB, BASE CURRENT (mA)
Figure 13. MJD45H11 Collector Saturation
Region
1000
Cob
100
Cob
100
10
0.1
1
10
10 100 0.1 1
10 100
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 14. MJD44H11 Capacitance
Figure 15. MJD45H11 Capacitance
www.onsemi.com
5
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| PDF Descargar | [ Datasheet MJD45H11.PDF ] | |
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