(PDF) MJD117T4 Datasheet - Complementary power Darlington transistors

Número de pieza	MJD117T4
Descripción	Complementary power Darlington transistors
Fabricantes	STMicroelectronics
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No Preview Available ! MJD112 MJD117 Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. . TAB 3 1 TO-252 (DPAK) Figure 1. Internal schematic diagram R1 typ. = 15 kΩ R2 typ. = 100 Ω Table 1. Device summary Order codes Marking MJD112T4 MJD112 MJD117T4 MJD117 January 2010 Polarity NPN PNP Doc ID 3540 Rev 3 Package DPAK DPAK Packaging Tape and reel Tape and reel 1/10 www.st.com 10 1 page MJD112, MJD117 Figure 8. Base-emitter saturation voltage (NPN) Electrical characteristics Figure 9. Base-emitter saturation voltage (PNP) Figure 10. Base-emitter on voltage (NPN) Figure 11. Base-emitter on voltage (PNP) Figure 12. Resistive load switching time Figure 13. Resistive load switching time (NPN, on) (PNP, on) Doc ID 3540 Rev 3 5/10 5 Page

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