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Fairchild - NPN Epitaxial Silicon Transistor

Numéro de référence MJD50
Description NPN Epitaxial Silicon Transistor
Fabricant Fairchild 
Logo Fairchild 





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MJD50 fiche technique
March 2014
MJD47 / MJD50
NPN Epitaxial Silicon Transistor
Features
• High-Voltage and High-Reliability
• D-PAK for Surface-Mount Applications
• Lead-Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “ - I ” Suffix)
• Electrically Similar to Popular TIP47 and TIP50
1 D-PAK 1 I-PAK
1.Base 2.Collector 3.Emitter
Ordering Information
Part Number
MJD47TF
MJD50TF
Top Mark
MJD47
MJD50
Package
TO-252 3L (DPAK)
TO-252 3L (DPAK)
Packing Method
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
VCBO Collector-Base Voltage
VCEO
VEBO
IC
ICP
IB
TJ
TSTG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Junction Temperature
Storage Temperature Range
MJD47
MJD50
MJD47
MJD50
Value
350
500
250
400
5
1
2
0.6
150
- 65 to 150
Unit
V
V
V
A
A
A
°C
°C
© 2001 Fairchild Semiconductor Corporation
MJD47 / MJD50 Rev. 1.1.0
1
www.fairchildsemi.com

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