|
|
Numéro de référence | BD439 | ||
Description | NPN Transistor | ||
Fabricant | JCST | ||
Logo | |||
1 Page
POWER SKY (H.K.) LTD.
TO-126 Plastic-Encapsulate Transistors
BD439/441 TRANSISTOR (NPN)
FEATURES
Amplifier and switching applications
TO-126
MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
BD439
BD441
60
80
V
VCEO
Collector-Emitter Voltage BD439
BD441
60
80
V
VEBO
IC
PC
TJ
Tstg
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
5
4
1.25
150
-55-150
V
A
W
℃
℃
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
123
Parameter
Collector-base breakdown voltage
Symbol
V(BR)CBO
Test conditions
IC=100μA,IE=0
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
(1)Pulse test
VCEO(SUS)(1)
IC=100mA,IB=0
V(BR)EBO
ICBO
IEBO
hFE(1) (1)
hFE(2) (1)
IE=100μA,IC=0
VCB=60V,IE=0
VCB=80V,IE=0
VEB=5V,IE=0
VCE=1V,IC=500mA
VCE=5V,IC=10mA
hFE(3) (1)
VCE=1V,IC=2A
VCE(sat) (1)
VBE(1)
IC=3A,IB=0.3A
VCE=1V,IC=2A
fT VCE=1V,IC=250mA
MIN TYP MAX UNIT
BD439
BD441
BD439
BD441
BD439
BD441
60
80
60
80
5
BD439
BD441
BD439
BD441
40
20
15
25
15
V
V
V
100 μA
1 mA
475
0.8 V
1.1 V
3 MHz
|
|||
Pages | Pages 2 | ||
Télécharger | [ BD439 ] |
No | Description détaillée | Fabricant |
BD430 | PNP SILICON PLANAR TRANSISTOR | Siemens Semiconductor Group |
BD433 | COMPLEMENTARY SILICON POWER TRANSISTORS | STMicroelectronics |
BD433 | NPN SILICON EPIBASE TRANSISTORS | Siemens Semiconductor Group |
BD433 | Medium Power Linear and Switching Applications | Fairchild Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |