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2N5886 fiches techniques PDF

NTE - Silicon Power Transistor

Numéro de référence 2N5886
Description Silicon Power Transistor
Fabricant NTE 
Logo NTE 





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2N5886 fiche technique
2N5884 (PNP) & 2N5886 (NPN)
Silicon Power Transistor
High Power Audio Amplifier
TO3 Type Package
Description:
The 2N5884 (PNP) and 2N5886 (NPN) are silicon complementary transistors designed for use in general
purpose power amplifier and switching applications.
Features:
D Low CollectorEmitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 15A
D Excellent DC Current Gain: hFE = 20 100 @ IC = 10A
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current,
Continuous
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25A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A
Total
DDeveircaeteDAisbsoipvaeti2o5n(CTC.
=
..
.+.2.5..C.).,.P. D. .
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. . . 200W
1.15W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +200C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875C/W
Electrical Characteristics: (TC =+25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus)
ICEO
ICBO
ICBX
IEBO
IC = 200mA, IB = 0, Note 1
VCE = 40V, IB = 0
VCB = 80V, IE = 0
VCE = 100V, VBE(off) = 1.5V
VCE = 100V, VBE(off) = 1.5V, TC = +150C
VEB = 5V, IC = 0
Note 1. Pulse Test: Pulse Width 300s. Duty Cycle 2%.
Min Typ Max Unit
80 − − V
− − 2.0 mA
− − 1.0 mA
− − 1.0 mA
− − 10 mA
− − 1.0 mA

PagesPages 2
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