|
|
Numéro de référence | 2N5886 | ||
Description | Silicon Power Transistor | ||
Fabricant | NTE | ||
Logo | |||
1 Page
2N5884 (PNP) & 2N5886 (NPN)
Silicon Power Transistor
High Power Audio Amplifier
TO−3 Type Package
Description:
The 2N5884 (PNP) and 2N5886 (NPN) are silicon complementary transistors designed for use in general
purpose power amplifier and switching applications.
Features:
D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 15A
D Excellent DC Current Gain: hFE = 20 − 100 @ IC = 10A
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current,
Continuous
IC. .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
25A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A
Total
DDeveircaeteDAisbsoipvaeti2o5n(CTC.
=
..
.+.2.5..C.).,.P. D. .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
. . . 200W
1.15W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875C/W
Electrical Characteristics: (TC =+25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus)
ICEO
ICBO
ICBX
IEBO
IC = 200mA, IB = 0, Note 1
VCE = 40V, IB = 0
VCB = 80V, IE = 0
VCE = 100V, VBE(off) = 1.5V
VCE = 100V, VBE(off) = 1.5V, TC = +150C
VEB = 5V, IC = 0
Note 1. Pulse Test: Pulse Width 300s. Duty Cycle 2%.
Min Typ Max Unit
80 − − V
− − 2.0 mA
− − 1.0 mA
− − 1.0 mA
− − 10 mA
− − 1.0 mA
|
|||
Pages | Pages 2 | ||
Télécharger | [ 2N5886 ] |
No | Description détaillée | Fabricant |
2N5880 | POWER TRANSISTORS(15A/160W) | Mospec Semiconductor |
2N5880 | COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS | Boca Semiconductor Corporation |
2N5880 | (2N5879 / 2N5880) Silicon PNP Power Transistors | Savantic |
2N5880 | Trans GP BJT PNP 80V 15A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |