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Semelab - SILICON MULTI-EPITAXIAL NPN TRANSISTOR

Numéro de référence BUX10
Description SILICON MULTI-EPITAXIAL NPN TRANSISTOR
Fabricant Semelab 
Logo Semelab 





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BUX10 fiche technique
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUX10
High Current Capability.
Hermetic TO3 Metal package.
Designed For Switching and Linear Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
160V
VCEX
Collector – Emitter Voltage VBE = -1.5V
160V
VCEO
Collector – Emitter Voltage
125V
VEBO
Emitter – Base Voltage
7V
IC Continuous Collector Current
25A
ICM Peak Collector Current
tp = 10ms
30A
IB Base Current
5A
PD Total Power Dissipation at TC = 25°C
150W
Derate Above 25°C
0.85W/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Max.
1.17
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Document Number 10465
Website: http://www.semelab-tt.com
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