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Numéro de référence | 2N3772 | ||
Description | High power NPN silicon power transistors | ||
Fabricant | Multicomp | ||
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1 Page
1165892
High power NPN silicon power transistors.
These devices are designed for linear amplifiers, series pass regulators, and inductive
switching applications.
Features:
• Forward biased second breakdown current capability
IS/b = 2.5 A dc at VCE = 60V dc.
• Pb-free packages.
(TO-3)
Style 1:
Pin 1. Base
2. Emitter
Collector (Case)
Dimensions Minimum
Maximum
A 1.550 (39.37) Reference
B - 1.050 (26.67)
C 0.250 (6.35) 0.335 (8.51)
D 0.038 (0.97) 0.043 (1.09)
E 0.055 (1.40) 0.070 (1.77)
G 0.430 (10.92) BSC
H 0.215 (5.46) BSC
K 0.440 (11.18) 0.480 (12.19)
L 0.665 (16.89) BSC
N - 0.830 (21.08)
Q 0.151 (3.84) 0.165 (4.19)
U 1.187 (30.15) BSC
V 0.131 (3.33) 0.188 (4.77)
Dimensions : Inches (Millimetres)
20 and 30 Ampere
Power Transistors
NPN Silicon
40 and 60 Volts, 150 Watts
(TO-3)
Case 1-07
Style 1
http://www.farnell.com
http://www.newark.com
http://www.cpc.co.uk
Page <1>
22/10/08 V1.1
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Pages | Pages 5 | ||
Télécharger | [ 2N3772 ] |
No | Description détaillée | Fabricant |
2N3771 | POWER TRANSISTORS(150W) | Mospec Semiconductor |
2N3771 | POWER TRANSISTORS (NPN SILICON) | ON Semiconductor |
2N3771 | HIGH POWER NPN SILICON TRANSISTOR | STMicroelectronics |
2N3771 | NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) | Wing Shing Computer Components |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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