DataSheetWiki


2SD2012 fiches techniques PDF

MCC - NPN Silicon Power Transistors

Numéro de référence 2SD2012
Description NPN Silicon Power Transistors
Fabricant MCC 
Logo MCC 





1 Page

No Preview Available !





2SD2012 fiche technique
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
2SD2012
Features
High DC Current Gain: hFE(1) =100 (Min.)
Low Saturation Voltage: VCE(sat)=1.0V (Max.)
High Power Dissipation: PC=25W (TC=25OC)
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
MaMxoimisuuremSRenastitiinvigtysLevel 1
Mounting Torgue: 5 in-lbs Maximum
Symbol
Rating
Rating
Unit
VCEO
Collector-Emitter Voltage
60 V
VCBO Collector-Base Voltage
60 V
VEBO
Emitter-Base Voltage
7.0 V
IC Collector Current
3.0 A
IB Base Current
0.5 A
PC
TJ
TSTG
Collector power dissipation
TA=25OC
TC=25OC
Junction Temperature
Storage Temperature
2.0
25
-55 to +150
-55 to +150
W
OC
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Typ Max Units
V(BR)CEO Collector-Emitter Breakdown Voltage 60 --- --- Vdc
(IC=50mAdc, IB=0)
ICBO Collector-Base Cutoff Current
--- --- 100 uAdc
(VCB=60Vdc,IE=0)
IEBO Emitter-Base Cutoff Current
--- --- 100 uAdc
(VEB=7.0Vdc, IC=0)
ON CHARACTERISTICS
hFE(1)
hFE(2)
V CE(sat)
VBE
fT
Cob
Forward Current Transfer ratio
(IC=0.5Adc, VCE=5.0Vdc)
Forward Current Transfer ratio
(IC=2.0Adc, VCE=5.0Vdc)
Collector-Emitter Saturation Voltage
(IC=2.0Adc, IB=0.2Adc)
Base-Emitter Saturation Voltage
(IC=0.5Adc, VCE=5.0Vdc)
Transition Frequency
(VCE=5.0Vdc, IC=0.5Adc)
Collector Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz)
100 --- 320
20 --- ---
--- 0.4 1.0
--- 0.75 1.0
--- 3.0 ---
--- 35 ---
---
---
Vdc
Vdc
MHz
pF
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.
NPN Silicon
Power Transistors
TO-220
BC
FS
Q
A
12 3
H
T
U
K
V
LJ
D
R
N
PIN 1.
BASE
PIN 2.
COLLECTOR
PIN 3.
EMITTER
DIMENSIONS
INCHES
MM
DIM MIN MAX
MIN
MAX
NOTE
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .140 .190 3.56
4.82
D .020 .045 0.51
1.14
F
.139 .161
3.53
4.09
G .190 .110 2.29
H --- .250 ---
J
.012 .025
0.30
2.79
6.35
0.64
K .500 .580 12.70 14.73
L
.045 .060
1.14
1.52
N .190 .210 4.83
5.33
Q .100 .135 2.54
3.43
R .080 .115 2.04
S .045 .055 1.14
2.92
1.39
T
.230 .270
5.84
6.86
U ----- .050 -----
V .045 ----- 1.15
1.27
-----
Revision: B
www.mccsemi.com
1 of 4
2011/06/01

PagesPages 4
Télécharger [ 2SD2012 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SD201 SILICON POWER TRANSISTOR SavantIC
SavantIC
2SD2010 NPN Transistor ROHM Semiconductor
ROHM Semiconductor
2SD2012 Silicon NPN Triple Diffused Type TRANSISTOR Toshiba Semiconductor
Toshiba Semiconductor
2SD2012 NPN SILICON POWER TRANSISTOR STMicroelectronics
STMicroelectronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche