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PDF TIP31C Data sheet ( Hoja de datos )

Número de pieza TIP31C
Descripción Complementary Silicon Plastic Power Transistors
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tip31c-npn-transistor


1. NPN Silicon Transistor - Fairchild






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TIP31, TIP31A, TIP31B, TIP31C,
(NPN), TIP32, TIP32A, TIP32B,
TIP32C, (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
• Collector-Emitter Saturation Voltage -
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
• Collector-Emitter Sustaining Voltage -
VCEO(sus) = 40 Vdc (Min) - TIP31, TIP32
= 60 Vdc (Min) - TIP31A, TIP32A
= 80 Vdc (Min) - TIP31B, TIP32B
= 100 Vdc (Min) - TIP31C, TIP32C
• High Current Gain - Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
• Compact TO-220 AB Package
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector-Emitter Voltage TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
VCEO
40 Vdc
60
80
100
Collector-Base Voltage TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
VCB
40 Vdc
60
80
100
Emitter-Base Voltage
Collector Current
Continuous
Peak
VEB
IC
5.0 Vdc
3.0 Adc
5.0
Base Current
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
Total Power Dissipation
@ TA = 25_C
Derate above 25_C
Unclamped Inductive
Load Energy (Note 1)
IB 1.0 Adc
PD
40 Watts
0.32 W/_C
PD
2.0 Watts
0.016 W/_C
E 32 mJ
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to
+ 150
_C
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω..
http://onsemi.com
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
40-60-80-100 VOLTS
40 WATTS
MARKING
4 DIAGRAM
12 3
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
AYWW
TIPxxx
TO-220AB
CASE 221A-09
STYLE 1
xxx = Specific Device Code:
31, 31A, 31B, 31C, 32, 32A, 32B, 32C
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2003
January, 2003 - Rev. 8
1
Publication Order Number:
TIP31A/D

1 page




TIP31C pdf
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
500
300 TJ = 150°C
100 25°C
70 −55 °C
50
30
VCE = 2.0 V
2.0
1.6
1.2 IC = 0.3 A
0.8
1.0 A
TJ = 25°C
3.0 A
10
7.0
5.0
0.03
0.05 0.07 0.1
0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
0.4
0
3.0 1.0 2.0 5.0 10 20 50 100 200 500 1000
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
1.4
TJ = 25°C
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6 VBE @ VCE = 2.0 V
0.4
0.2 VCE(sat) @ IC/IB = 10
0
0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 10. “On” Voltages
2.0 3.0
+2.5
+2.0 *APPLIES FOR IC/IB ≤ hFE/2
+1.5 TJ = −65°C TO +150°C
+1.0
+0.5 *θVC FOR VCE(sat)
0
−0.5
−1.0
−1.5 θVB FOR VBE
−2.0
−2.5
0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0
IC, COLLECTOR CURRENT (AMP)
2.0 3.0
Figure 11. Temperature Coefficients
103
VCE = 30 V
102
TJ = 150°C
101
100 100°C
10−1 REVERSE
FORWARD
10−2 25°C
10−3
−0.4 −0.3 −0.2 −0.1
ICES
0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut-Off Region
107
106
105 IC ≈ ICES
IC = 10 x ICES
VCE = 30 V
104 IC = 2 x ICES
103 (TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
102
20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Effects of Base-Emitter Resistance
http://onsemi.com
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