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Numéro de référence | TIP32C | ||
Description | High Power Bipolar Transistor | ||
Fabricant | Multicomp | ||
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1 Page
TIP31, TIP32
High Power Bipolar Transistors
Features:
• Collector - emitter sustaining voltage - VCEO (sus)
= 60 V (Minimum) - TIP31A, TIP32A
= 100 V (Minimum) - TIP31C, TIP32C
• Collector - emitter sustaining voltage - VCE (sat) = 1.2 V (Maximum) at IC = 3 A
• Current gain - bandwidth product fT = 3 MHz (Minimum) at IC = 500 mA
TO-220
Pin
1. Base
2. Collector
3. Emitter
4. Collector (Case)
Maximum Ratings
Dimensions
A
B
C
D
E
F
G
H
I
J
K
L
M
O
Characteristic
Collector - emitter voltage
Collector - base voltage
Emitter - base voltage
Collector current - continuous
- peak
Base current
Total power dissipation at tc = 25°C
derate above 25°C
Operating and storage junction temperature range
Minimum Maximum
14.68
15.31
9.78 10.42
5.01 6.52
13.06
14.62
3.57 4.07
2.42 3.66
1.12 1.36
0.72 0.96
4.22 4.98
1.14 1.38
2.2 2.97
0.33 0.55
2.48 2.98
3.7 3.9
Dimensions : Millimetres
NPN
TIP31A
TIP32C
PNP
TIP32A
TIP32C
3 Amperes
Complementary Silicon
Power Transistors
60 - 100 Volts
40 Watts
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
TJ, TSTG
TIP31A
TIP32A
TIP31C
TIP32C
60 100
5
3
5
1
40
0.32
-65 to +150
Unit
V
A
W
W/°C
°C
Thermal Characteristics
Characteristic
Symbol
Maximum
Unit
Thermal resistance junction to case
Rθjc
3.125
°C/W
www.element14.com
www.farnell.com
www.newark.com
Page <1>
15/12/11 V1.1
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Pages | Pages 4 | ||
Télécharger | [ TIP32C ] |
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