PDF NCP81382 Data sheet ( Hoja de datos )

Número de pieza	NCP81382
Descripción	Integrated Driver and MOSFET
Fabricantes	ON Semiconductor
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No Preview Available ! NCP81382 Integrated Driver and MOSFET The NCP81382 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a single package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP81382 integrated solution greatly reduces package parasitics and board space compared to a discrete component solution. Features • Capable of Average Currents up to 35 A • Capable of Switching at Frequencies up to 2 MHz • Capable of Peak Currents up to 70 A • Compatible with 3.3 V or 5 V PWM Input • Responds Properly to 3−level PWM Inputs • Option for Zero Cross Detection with 3−level PWM • ZCD_EN Input for Diode Emulation with 2−level PWM • Internal Bootstrap Diode • Undervoltage Lockout • Supports Intel® Power State 4 • Thermal Warning output • Thermal Shutdown • This is a Pb−Free Device Applications • Desktop & Notebook Microprocessors 5 V VIN Zero Current Detect Enable DRVON from controller PWM from controller SMOD from controller VCCD VCC ZCD_EN VIN THWN BOOT DISB# PWM SMOD# CGND PHASED PHASEF VSW PGND Figure 1. Application Schematic VOUT www.onsemi.com MARKING DIAGRAM 1 36 QFN36 6x4 CASE 485DZ 81382 ALYWG G A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) PINOUT DIAGRAM VCCD 7 GL 8 GL 9 GL 10 GL 11 VSW 12 VSW 13 VSW 14 VSW 15 VSW 16 VSW 17 VSW 18 38 TEST 37 PGND 36 ZCD_EN 35 BOOT 34 PHASED 33 GH 32 PHASEF 31 PGND 30 VIN 29 VIN 28 VIN 27 VIN 26 VIN 25 VIN (Top View) ORDERING INFORMATION Device NCP81382MNTXG Package QFN36 (Pb−Free) Shipping† 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 February, 2016 − Rev. 2 1 Publication Order Number: NCP81382/D 1 page NCP81382 ELECTRICAL CHARACTERISTICS (continued) (VVCC = VVCCD = 5.0 V, VVIN = 12 V, VDISB# = 2.0 V, CVCCD = CVCC = 0.1 mF unless specified otherwise) Min/Max values are valid for the temperature range −40°C ≤ TA ≤ 125°C unless noted otherwise, and are guaranteed by test, design or statistical correlation. Parameter Symbol Conditions Min Typ Max Unit VCCD SUPPLY CURRENT Enabled, No switching DISB# = 5 V, PWM = 0 V, VPHASED = 0 V − 175 300 mA Disabled DISB# = 0 V − 0.1 1 mA DISB# INPUT Input Resistance To Ground, @ 25°C − 461 − kW Upper Threshold Lower Threshold Hysteresis Enable Delay Time VUPPER − − 2.0 V VLOWER 0.8 − − V VUPPER – VLOWER 200 − − mV tENABLE Time from DISB# transitioning HI to − − 40 ms when VSW responds to PWM. Disable Delay Time tDISABLE Time from DISB# transitioning LOW to when both output FETs are off. − 25 50 ns PWM INPUT Input High Voltage Input Mid−state Voltage Input Low Voltage Input Resistance Input Resistance PWM Input Bias Voltage PWM Propagation Delay, Rising VPWM_HI 2.65 − − V VPWM_MID 1.4 − 2.0 V VPWM_LO − − 0.7 V RPWM_HIZ SMOD# = VSMOD#_HI or VSMOD#_LO 10 − − MW RPWM_BIAS SMOD# = VSMOD#_MID − 63 − kW VPWM_BIAS SMOD# = VSMOD#_MID − 1.7 − V tpdlGL PWM = 2.25 V to GL = 90%; SMOD# = LOW − 25 35 ns PWM Propagation Delay, Falling Exiting PWM Mid−state Propagation Delay, Mid−to−Low tpdlGH TPWM_EXIT_L PWM = 0.75 V to GH = 90% PWM = Mid−to−Low to GL = 10%, ZCD_EN = High − 15 25 ns − 13 25 ns Exiting PWM Mid−state Propagation Delay, Mid−to−High TPWM_EXIT_H PWM = Mid−to−High to GH = 10% − 13 25 ns SMOD# INPUT SMOD# Input Voltage High SMOD# Input Voltage Mid−state SMOD# Input Voltage Low SMOD# Input Resistance SMOD# Propagation Delay, Falling VSMOD_HI VSMOD#_MID VSMOD_LO RSMOD#_UP TSMOD#_PD_F Pull−up resistance to VCC SMOD# = Low to GL = 90%, PWM = Low 2.65 − 1.4 − −− − 440 − 26 − 2.0 0.7 − 30 V V V kW ns SMOD# Propagation Delay, Rising TSMOD#_PD_R SMOD# = High to GL = 10%, ZCD_EN = High, PWM = Low − 15 30 ns ZCD_EN INPUT ZCD_EN Input Voltage High VZCD_EN_HI 2.0 − − V ZCD_EN Input Voltage Low VZCD_EN_LO − − 0.8 V ZCD_EN Hysteresis VZCD_EN_HYS − 250 − mV ZCD_EN Input Resistance RZCD_EN_PU to VCC − 270 − kW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 5 5 Page NCP81382 For Use with Controllers with 3−State PWM and No Zero Current Detection Capability: Table 3. LOGIC TABLE − 3−STATE PWM CONTROLLERS WITH NO ZCD PWM SMOD# ZCD_EN HHH MHH L HH GH ON OFF OFF GL OFF ZCD ON This section describes operation with controllers that are capable of 3 states in their PWM output and relies on the NCP81382 to conduct zero current detection during discontinuous conduction mode (DCM). The SMOD# pin needs to either be set to 5 V or left disconnected. The NCP81382 has an internal pull−up resistor that connects to VCC that sets SMOD# to the logic high state if this pin is disconnected. The ZCD_EN pin needs to either be set to 5 V or left disconnected. The NCP81382 has an internal pull−up resistor connected to VCC that will set ZCD_EN to the logic high state if this pin is left disconnected. To operate the buck converter in continuous conduction mode (CCM), PWM needs to switch between the logic high and low states. To enter into DCM, PWM needs to be switched to the mid−state. Whenever PWM transitions to mid−state, GH turns off and GL turns on. GL stays on for the duration of the de−bounce timer and ZCD blanking timers. Once these timers expire, the NCP81382 monitors the SW voltage and turns GL off when SW exceeds the ZCD threshold voltage. By turning off the LS FET, the body diode of the LS FET allows any positive current to go to zero but prevents negative current from conducting. Figure 9. Timing Diagram − 3−state PWM Controller, No ZCD www.onsemi.com 11 11 Page

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